vishay siliconix suu10p06-280l document number: 68811 s-81956-rev. g, 25-aug-08 www.vishay.com 1 p-channel 60-v (d-s), 175 c mosfet, logic level features ? trenchfet ? power mosfets ? 175 c rated maximum junction temperature product summary v ds (v) r ds(on) ( )i d (a) - 60 0.170 at v gs = - 10 v - 10 0.280 at v gs = - 4.5 v - 8 to-251 s gd top view drain connected to drain-tab ordering information: suu10p06-280l SUU10P06-280L-E3 (lead (pb)-free) s g d p-channel mosfe t notes: a. surface mounted on fr4 board. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t j = 150 c) t c = 25 c i d - 10 a t c = 100 c - 7 pulsed drain current i dm - 20 continuous source current (diode conduction) i s - 10 avalanche current i as - 10 single pulse avalanche energy l = 0.1 mh e as 5mj maximum power dissipation t c = 25 c p d 37 w t a = 25 c 2 a operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient a fr4 board mount r thja 60 70 c/w free air 120 140 junction-to-case r thjc 3.7 4.0 a v aila b le rohs* compliant
www.vishay.com 2 document number: 68811 s-81956-rev. g, 25-aug-08 vishay siliconix suu10p06-280l notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = - 250 a - 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 2.0 - 3.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 60 v, v gs = 0 v - 1 a v ds = - 60 v, v gs = 0 v, t j = 125 c - 50 v ds = - 60 v, v gs = 0 v, t j = 175 c - 150 on-state drain current b i d(on) v ds = - 5 v, v gs = - 10 v - 10 a drain-source on-state resistance b r ds(on) v gs = - 10 v, i d = - 5 a 0.130 0.170 v gs = - 10 v, i d = - 5 a, t j = 125 c 0.31 v gs = - 10 v, i d = - 5 a, t j = 175 c 0.375 v gs = - 4.5 v, i d = - 2 a 0.210 0.280 forward transconductance b g fs v ds = - 15 v, i d = - 5 a 6s dynamic input capacitance c iss v ds = - 25 v, v gs = 0 v, f = 1 mhz 635 pf output capacitance c oss 100 reverse transfer capacitance c rss 30 total gate charge q g v ds = - 30 v, v gs = - 10 v, i d = - 10 a 11.5 25 nc gate-source charge q gs 3.5 gate-drain charge q gd 2 tu r n - o n d e l ay t i m e c t d(on) v dd = - 30 v, r l = 3 i d ? 10 a, v gen = - 10 v, r g = 2.5 920 ns rise time c t r 16 20 turn-off delay time c t d(off) 17 30 fall time c t f 19 35 source-drain diode ratings and characteristics t c = 25 c a pulsed current i sm - 20 a forward voltage b v sd i f = 10 a, v gs = 0 v - 1.3 v reverse recovery time t rr i f = 10 a, di/dt = 100 a/s 50 80 ns
document number: 68811 s-81956-rev. g, 25-aug-08 www.vishay.com 3 vishay siliconix suu10p06-280l typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance v ds - drain-to-source voltage (v) - drain current (a) i d 0 6 12 18 24 30 0246810 v gs = 10 thru 7 v 3 v 4 v 5 v 6 v 0 3 6 9 12 15 18 048121620 - transconductance (s) g fs t c = - 55 c 25 c 125 c i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) c rss 0 200 400 600 800 1000 0 102030405060 c iss c oss transfer characteristics on-resistance vs. drain current gate charge v gs - gate-to-source voltage (v) - drain current (a) i d 0 2 4 6 8 10 012345 25 c - 55 c t c = 125 c - on-resistance ( ) i d - drain current (a) r ds(on) 0.0 0.3 0.6 0.9 1.2 0246810 v gs = 4.5 v v gs = 10 v - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 4 8 12 16 20 0 4 8 12162024 v ds = 20 v i d = 10 a
www.vishay.com 4 document number: 68811 s-81956-rev. g, 25-aug-08 vishay siliconix suu10p06-280l typical characteristics 25 c, unless otherwise noted thermal ratings vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68811. on-resistance vs. junction temperature (normalized) - on-resistance t j - junction temperature (c) r ds(on) 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs = 10 v i d = 5 a source-drain diode forward voltage 0.3 0.6 0.9 1.2 1.5 v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 t j = 25 c t j = 150 c drain current vs. case temperature t c - case temperature (c) - drain current (a) i d 0 3 6 9 12 0 25 50 75 100 125 150 175 safe operating area - drain current (a) i d 30 10 0.1 0.1 1 10 100 1 t c = 25 c single pulse 1 ms 10 ms 1 s, dc 10 s 100 s limited by r ds(on) * v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified 100 ms normalized thermal transient impedance, junction-to-case square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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